Techniques for writing data to different portions of storage devices based on write frequencies are disclosed. Frequencies of data writes to various portions of a memory are monitored. The memory includes various storage technologies. Each portion includes one of the storage technologies and has a respective lifetime. An order that the portions are written into and recycled is dynamically managed to equalize respective life expectancies of the portions in view of differences in endurance values of the portions, the monitored frequencies of data writes, and the lifetimes. In some embodiments, the storage technologies include Single-Level Cell (SLC) flash memory storage technology and Multi-Level Cell (MLC) flash memory storage technology. The SLC and MLC flash memory storage technologies are optionally integrated in one device. In some embodiments, the storage technologies include two or more different types of SLC flash memory storage technologies, optionally integrated in one device.