发明授权
- 专利标题: Multiple power mode system and method for memory
- 专利标题(中): 多功率模式系统和存储器方法
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申请号: US12417309申请日: 2009-04-02
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公开(公告)号: US08230239B2公开(公告)日: 2012-07-24
- 发明人: Feng Wang , Shiqun Gu
- 申请人: Feng Wang , Shiqun Gu
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理商 Michelle Gallardo; Nicholas J. Pauley; Jonathan T. Velasco
- 主分类号: G06F1/00
- IPC分类号: G06F1/00 ; G06F1/26 ; G06F12/00 ; G11C5/14
摘要:
A memory power management system and method supporting multiple power modes for powering memory channels. The power management system can include a memory controller that controls the memory channel; a throughput detector that detects a requested throughput of the memory channel; a power control logic that determines a desired power mode corresponding to the requested throughput; and a power control device that supplies a desired voltage of the desired power mode to the memory channel. The power management system can include multiple memory controllers for controlling a multi-channel memory independently. The method includes detecting a requested throughput for the memory channel; determining a desired voltage related to the requested throughput; requesting the desired voltage from a voltage device; and applying the desired voltage to the memory channel. In some embodiments, the method only applies the desired voltage if it does not change for a threshold time duration.
公开/授权文献
- US20100257379A1 Multiple Power Mode System and Method for Memory 公开/授权日:2010-10-07
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