- 专利标题： Integrated structures of high performance active devices and passive devices
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申请号： US13426835申请日： 2012-03-22
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公开(公告)号： US08232139B1公开(公告)日： 2012-07-31
- 发明人: Robert M. Rassel , Anthony K. Stamper , Daniel S. Vanslette
- 申请人： Robert M. Rassel , Anthony K. Stamper , Daniel S. Vanslette
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Anthony Canale
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Integrated structures having high performance CMOS active devices mounted on passive devices are provided. The structure includes an integrated passive device chip having a plurality of through wafer vias, mounted to a ground plane. The structure further includes at least one CMOS device mounted on the integrated passive device chip using flip chip technology and being grounded to the ground plane through the through wafer vias of the integrated passive device chip.
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