发明授权
US08232176B2 Dielectric deposition and etch back processes for bottom up gapfill
有权
介质沉积和回填工艺，用于自下而上的间隙填充
- 专利标题： Dielectric deposition and etch back processes for bottom up gapfill
- 专利标题（中）： 介质沉积和回填工艺，用于自下而上的间隙填充
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申请号： US11765944申请日： 2007-06-20
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公开(公告)号： US08232176B2公开(公告)日： 2012-07-31
- 发明人: Dmitry Lubomirsky , Srinivas D. Nemani , Ellie Yieh
- 申请人： Dmitry Lubomirsky , Srinivas D. Nemani , Ellie Yieh
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.