发明授权
US08232552B2 Noncrystalline oxide semiconductor thin film, process for producing the noncrystalline oxide semiconductor thin film, process for producing thin-film transistor, field-effect-transistor, light emitting device, display device, and sputtering target
有权
非晶氧化物半导体薄膜，用于制造非结晶氧化物半导体薄膜的工艺，薄膜晶体管的制造工艺，场效应晶体管，发光器件，显示器件和溅射靶
- 专利标题： Noncrystalline oxide semiconductor thin film, process for producing the noncrystalline oxide semiconductor thin film, process for producing thin-film transistor, field-effect-transistor, light emitting device, display device, and sputtering target
- 专利标题（中）： 非晶氧化物半导体薄膜，用于制造非结晶氧化物半导体薄膜的工艺，薄膜晶体管的制造工艺，场效应晶体管，发光器件，显示器件和溅射靶
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申请号： US12593045申请日： 2008-03-26
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公开(公告)号： US08232552B2公开(公告)日： 2012-07-31
- 发明人: Koki Yano , Kazuyoshi Inoue
- 申请人： Koki Yano , Kazuyoshi Inoue
- 申请人地址： JP Tokyo
- 专利权人： Idemitsu Kosan Co., Ltd.
- 当前专利权人： Idemitsu Kosan Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Millen, White, Zelano & Branigan PC
- 优先权： JP2007-078996 20070326
- 国际申请： PCT/JP2008/055634 WO 20080326
- 国际公布： WO2008/117810 WO 20081002
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/12
摘要：
This invention provides an amorphous oxide semiconductor thin film, which is insoluble in a phosphoric acid-based etching solution and is soluble in an oxalic acid-based etching solution by optimizing the amounts of indium, tin, and zinc, a method of producing the amorphous oxide semiconductor thin film, etc. An image display device (1) comprises a glass substrate (10), a liquid crystal (40) as a light control element, a bottom gate-type thin film transistor (1) for driving the liquid crystal (40), a pixel electrode (30), and an opposing electrode (50). The amorphous oxide semiconductor thin film (2) in the bottom gate-type thin film transistor (1) has a carrier density of less than 10+18 cm−3, is insoluble in a phosphoric acid-based etching liquid, and is soluble in an oxalic acid-based etching liquid.
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