发明授权
US08232595B2 Semiconductor device including a power MISFET and method of manufacturing the same
失效
包括功率MISFET的半导体器件及其制造方法
- 专利标题： Semiconductor device including a power MISFET and method of manufacturing the same
- 专利标题（中）： 包括功率MISFET的半导体器件及其制造方法
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申请号： US13111001申请日： 2011-05-19
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公开(公告)号： US08232595B2公开(公告)日： 2012-07-31
- 发明人: Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
- 申请人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Mattingly & Malur, PC
- 优先权： JP11-266668 19990921
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L27/10 ; H01L29/74
摘要：
In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).
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