Invention Grant
- Patent Title: Via and method of via forming and method of via filling
- Patent Title (中): 通孔形成方法和通孔填充方法
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Application No.: US12814938Application Date: 2010-06-14
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Publication No.: US08232626B2Publication Date: 2012-07-31
- Inventor: Yat Kit Tsui , Dan Yang , Xunqing Shi
- Applicant: Yat Kit Tsui , Dan Yang , Xunqing Shi
- Applicant Address: HK Shatin, New Territories
- Assignee: Hong Kong Applied Science & Technology Research Institute Co. Ltd.
- Current Assignee: Hong Kong Applied Science & Technology Research Institute Co. Ltd.
- Current Assignee Address: HK Shatin, New Territories
- Agency: Stites & Harbison PLLC
- Agent Douglas E. Jackson
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/44 ; H05K1/11
Abstract:
An electronic or micromechanical device having first (11) and second (12) surfaces and a via extending through the device from the first surface to the second surface. The via comprises integrally formed first (84, 86), second (82) and third (88) portions. The first portion (84, 86) extends from the first surface (11) to the second surface (12). The second portion (82) extends over a part of the first surface (11) of the device. The third portion (88) extends over a part of the second surface (12) of the device. Preferably the first portion comprises first and second parts, the second part extending through an active region of the device and having a narrower width than the first part. A method of forming and filling the via is also disclosed.
Public/Granted literature
- US20110304026A1 VIA AND METHOD OF VIA FORMING AND METHOD OF VIA FILLING Public/Granted day:2011-12-15
Information query
IPC分类:
