A surface emission type electron source including a first electrode having a planar form, a second electrode having a planar form facing the first electrode, an electron passage layer disposed between the first electrode and the second electrode, an insulator or semiconductor layer between the second electrode and the electron passage layer, and a power source part configured to apply a voltage to the second electrode and the first electrode. The electron passage layer includes plural quantum wires extending in a first direction from the first electrode to the second electrode. The quantum wires are made of silicon and spaced apart from each other at predetermined intervals, and electrons are emitted from a front surface of the second electrode. Protrusions protruding toward leading ends of the quantum wires are formed on a back surface of the second electrode at positions corresponding to the quantum wires.