发明授权
- 专利标题: Fault-tolerant non-volatile integrated circuit memory
- 专利标题(中): 容错非易失性集成电路存储器
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申请号: US13154150申请日: 2011-06-06
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公开(公告)号: US08234439B2公开(公告)日: 2012-07-31
- 发明人: William H. Radke
- 申请人: William H. Radke
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Knobbe Martens Olson & Bear LLP
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
Apparatus and methods are disclosed, such as those that store data in a plurality of non-volatile integrated circuit memory devices, such as NAND flash, with convolutional encoding. A relatively high code rate for the convolutional code consumes relatively little extra memory space. In one embodiment, the convolutional code is spread over portions of a plurality of memory devices, rather than being concentrated within a page of a particular memory device. In one embodiment, a code rate of m/n is used, and the convolutional code is stored across n memory devices.
公开/授权文献
- US20110239093A1 FAULT-TOLERANT NON-VOLATILE INTEGRATED CIRCUIT MEMORY 公开/授权日:2011-09-29
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