Invention Grant
US08236372B2 Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials
失效
形成具有包括多个含金属氧化物的材料的电介质区域的电容器的方法
- Patent Title: Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials
- Patent Title (中): 形成具有包括多个含金属氧化物的材料的电介质区域的电容器的方法
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Application No.: US12483455Application Date: 2009-06-12
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Publication No.: US08236372B2Publication Date: 2012-08-07
- Inventor: Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hall , Chris Carlson
- Applicant: Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hall , Chris Carlson
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: B05D5/12
- IPC: B05D5/12
Abstract:
Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
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