Invention Grant
- Patent Title: Layered contact structure for solar cells
- Patent Title (中): 太阳能电池层状接触结构
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Application No.: US12298956Application Date: 2008-08-29
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Publication No.: US08236598B2Publication Date: 2012-08-07
- Inventor: Chandrashekhar S. Khadilkar , Srinivasan Sridharan , Paul S. Seman , Aziz S. Shaikh
- Applicant: Chandrashekhar S. Khadilkar , Srinivasan Sridharan , Paul S. Seman , Aziz S. Shaikh
- Applicant Address: US OH Cleveland
- Assignee: Ferro Corporation
- Current Assignee: Ferro Corporation
- Current Assignee Address: US OH Cleveland
- Agency: Rankin, Hill & Clark LLP
- International Application: PCT/US2008/074711 WO 20080829
- International Announcement: WO2009/029738 WO 20090305
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Formulations and methods of making semiconductor devices and solar cell contacts are disclosed. The invention provides a method of making a semiconductor device or solar cell contact including ink-jet printing onto a silicon wafer an ink composition, typically including a high solids loading (20-80 wt %) of glass frit and preferably a conductive metal such as silver. The wafer is then fired such that the glass frit fuses to form a glass, thereby forming a contact layer to silicon.
Public/Granted literature
- US20100173446A1 Layered Contact Structure For Solar Cells Public/Granted day:2010-07-08
Information query
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