Invention Grant
- Patent Title: Polycrystalline semiconductor layers and methods for forming the same
- Patent Title (中): 多晶半导体层及其形成方法
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Application No.: US12554486Application Date: 2009-09-04
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Publication No.: US08236603B1Publication Date: 2012-08-07
- Inventor: Leslie G. Fritzemeier , Ryne P. Raffaelle , Christopher Leitz
- Applicant: Leslie G. Fritzemeier , Ryne P. Raffaelle , Christopher Leitz
- Applicant Address: US CA San Jose US NY Rochester
- Assignee: Solexant Corp.,Rochester Institute of Technology
- Current Assignee: Solexant Corp.,Rochester Institute of Technology
- Current Assignee Address: US CA San Jose US NY Rochester
- Agency: Bingham McCutchen LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A semiconductor structure may include a polycrystalline substrate comprising a metal, the polycrystalline substrate having substantially randomly oriented grains, as well as a buffer layer disposed thereover. The buffer layer may comprise a plurality of islands having an average island spacing therebetween. A polycrystalline semiconductor layer is disposed over the buffer layer.
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