发明授权
US08236654B2 Reduction of threshold voltage variation in transistors comprising a channel semiconductor alloy by reducing deposition non-uniformities
有权
通过减少沉积不均匀性来减少包括沟道半导体合金的晶体管中的阈值电压变化
- 专利标题： Reduction of threshold voltage variation in transistors comprising a channel semiconductor alloy by reducing deposition non-uniformities
- 专利标题（中）： 通过减少沉积不均匀性来减少包括沟道半导体合金的晶体管中的阈值电压变化
-
申请号： US12637112申请日： 2009-12-14
-
公开(公告)号： US08236654B2公开(公告)日： 2012-08-07
- 发明人: Stephan Kronholz , Andreas Ott
- 申请人： Stephan Kronholz , Andreas Ott
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson
- 优先权： DE102008063402 20081231
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/336
摘要：
A threshold adjusting semiconductor material, such as a silicon/germanium alloy, may be provided selectively for one type of transistors on the basis of enhanced deposition uniformity. For this purpose, the semiconductor alloy may be deposited on the active regions of any transistors and may subsequently be patterned on the basis of a highly controllable patterning regime. Consequently, threshold variability may be reduced.
公开/授权文献
信息查询
IPC分类:
