Invention Grant
- Patent Title: Dual-damascene process to fabricate thick wire structure
- Patent Title (中): 双镶嵌工艺制造粗线结构
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Application No.: US12564482Application Date: 2009-09-22
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Publication No.: US08236663B2Publication Date: 2012-08-07
- Inventor: Douglas D. Coolbaugh , Keith E. Downes , Peter J Lindgren , Anthony K. Stamper
- Applicant: Douglas D. Coolbaugh , Keith E. Downes , Peter J Lindgren , Anthony K. Stamper
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Richard Kotulak
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method and semiconductor device. In the method, at least one partial via is etched in a stacked structure and a border is formed about the at least one partial via. The method further includes performing thick wiring using selective etching while continuing via etching to at least one etch stop layer.
Public/Granted literature
- US20100009509A1 DUAL-DAMASCENE PROCESS TO FABRICATE THICK WIRE STRUCTURE Public/Granted day:2010-01-14
Information query
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