发明授权
US08236686B2 Dual metal gates using one metal to alter work function of another metal
失效
双金属门使用一种金属来改变另一种金属的功能
- 专利标题: Dual metal gates using one metal to alter work function of another metal
- 专利标题(中): 双金属门使用一种金属来改变另一种金属的功能
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申请号: US12129984申请日: 2008-05-30
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公开(公告)号: US08236686B2公开(公告)日: 2012-08-07
- 发明人: Byoung H. Lee , Sang Ho Bae , Kisik Choi , Rino Choi , Craig Huffman , Prashant Majhi , Jong Hoan Sim , Seung-Chul Song , Zhibo Zhang
- 申请人: Byoung H. Lee , Sang Ho Bae , Kisik Choi , Rino Choi , Craig Huffman , Prashant Majhi , Jong Hoan Sim , Seung-Chul Song , Zhibo Zhang
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Hoffman Warnick LLC
- 代理商 Anthony J. Canale
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
Methods of forming dual metal gates and the gates so formed are disclosed. A method may include forming a first metal (e.g., NMOS metal) layer on a gate dielectric layer and a second metal (e.g., PMOS metal) layer on the first metal layer, whereby the second metal layer alters a work function of the first metal layer (to form PMOS metal). The method may remove a portion of the second metal layer to expose the first metal layer in a first region; form a silicon layer on the exposed first metal layer in the first region and on the second metal layer in a second region; and form the dual metal gates in the first and second regions. Since the gate dielectric layer is continuously covered with the first metal, it is not exposed to the damage from the metal etch process.