发明授权
US08237145B2 Nonvolatile memory device with recording layer having two portions of different nitrogen amounts
有权
具有记录层的非易失性存储器件具有两个不同氮量的部分
- 专利标题： Nonvolatile memory device with recording layer having two portions of different nitrogen amounts
- 专利标题（中）： 具有记录层的非易失性存储器件具有两个不同氮量的部分
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申请号： US12858975申请日： 2010-08-18
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公开(公告)号： US08237145B2公开(公告)日： 2012-08-07
- 发明人: Chikayoshi Kamata , Takayuki Tsukamoto , Kohichi Kubo , Shinya Aoki , Takahiro Hirai , Toshiro Hiraoka
- 申请人： Chikayoshi Kamata , Takayuki Tsukamoto , Kohichi Kubo , Shinya Aoki , Takahiro Hirai , Toshiro Hiraoka
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L23/58
摘要：
According to one embodiment, a nonvolatile memory device includes a stacked body including a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer. The recording layer is capable of reversibly changing between a first state and a second state having a resistance higher than a resistance in the first state by a current supplied via the first layer and the second layer. The recording layer includes a first portion and a second portion provided in a plane of a major surface of the recording layer. The second portion has a nitrogen amount higher than a nitrogen amount in the first portion.
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