Invention Grant
- Patent Title: Back side illumination image sensor and a process thereof
- Patent Title (中): 背面照明图像传感器及其处理
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Application No.: US12795256Application Date: 2010-06-07
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Publication No.: US08237207B2Publication Date: 2012-08-07
- Inventor: Yang Wu , Chi-Shao Lin
- Applicant: Yang Wu , Chi-Shao Lin
- Applicant Address: KY Grand Cayman
- Assignee: Himax Imaging, Inc.
- Current Assignee: Himax Imaging, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Stout, Uxa, Buyan & Mullins, LLP
- Main IPC: H01L31/062
- IPC: H01L31/062
Abstract:
A process and structure of a back side illumination (BSI) image sensor are disclosed. An n-type doped region is formed in a substrate, and a transfer gate is formed on top of the semiconductor substrate. A p-type doped region is formed in the n-type doped region either using the transfer gate as a mask or is non-self aligned formed.
Public/Granted literature
- US20110169055A1 BACK SIDE ILLUMINATION IMAGE SENSOR AND A PROCESS THEREOF Public/Granted day:2011-07-14
Information query
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