Invention Grant
US08237214B2 Non-volatile memory device including metal-insulator transition material
失效
包括金属 - 绝缘体过渡材料的非易失性存储器件
- Patent Title: Non-volatile memory device including metal-insulator transition material
- Patent Title (中): 包括金属 - 绝缘体过渡材料的非易失性存储器件
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Application No.: US11980352Application Date: 2007-10-31
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Publication No.: US08237214B2Publication Date: 2012-08-07
- Inventor: Wan-jun Park , Jo-won Lee , Sang-hun Jeon , Chung-woo Kim
- Applicant: Wan-jun Park , Jo-won Lee , Sang-hun Jeon , Chung-woo Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0138863 20061229
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
A non-volatile memory device including a metal-insulator transition (MIT) material is provided. The non-volatile memory device includes a gate stack having a tunneling layer, a charge trap layer, a blocking layer and a gate electrode formed on a substrate, wherein at least one of the tunneling layer and the blocking layer is formed of an MIT (metal-insulator transition) material.
Public/Granted literature
- US20080157186A1 Non-volatile memory device including metal-insulator transition material Public/Granted day:2008-07-03
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