Invention Grant
US08237297B2 System and method for providing alignment mark for high-k metal gate process
有权
用于提供高k金属栅极工艺的对准标记的系统和方法
- Patent Title: System and method for providing alignment mark for high-k metal gate process
- Patent Title (中): 用于提供高k金属栅极工艺的对准标记的系统和方法
-
Application No.: US12835415Application Date: 2010-07-13
-
Publication No.: US08237297B2Publication Date: 2012-08-07
- Inventor: Kuei Shun Chen , Meng-Wei Chen , George Liu , Jiann Yuan Huang , Chia-Ching Lin
- Applicant: Kuei Shun Chen , Meng-Wei Chen , George Liu , Jiann Yuan Huang , Chia-Ching Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/544
- IPC: H01L23/544
Abstract:
The alignment mark and method for making the same are described. In one embodiment, a semiconductor structure includes a substrate having a device region and an alignment region; a first shallow trench isolation (STI) feature in the alignment region and having a first depth D1; a second STI feature in the device region and having a second depth D2; an alignment mark with patterned features overlying the first STI in the alignment region; and a gate stack formed on an active region in the device region.
Public/Granted literature
- US20110241119A1 SYSTEM AND METHOD FOR PROVIDING ALIGNMENT MARK FOR HIGH-K METAL GATE PROCESS Public/Granted day:2011-10-06
Information query
IPC分类:
