Invention Grant
US08238147B2 Multi-level phase change memory device, program method thereof, and method and system including the same
有权
多级相变存储器件及其编程方法，以及包括其的方法和系统
- Patent Title: Multi-level phase change memory device, program method thereof, and method and system including the same
- Patent Title (中): 多级相变存储器件及其编程方法，以及包括其的方法和系统
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Application No.: US12283409Application Date: 2008-09-11
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Publication No.: US08238147B2Publication Date: 2012-08-07
- Inventor: Jun-Soo Bae , Hideki Horii , Jong-Chan Shin
- Applicant: Jun-Soo Bae , Hideki Horii , Jong-Chan Shin
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2007-0093170 20070913
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
In a program method for a multi-level phase change memory device, multi-level data to be programmed in a selected memory cell is received, and a program signal is applied to the selected memory cell according to the received multi-level data. Herein, a rising time of the program signal is set to be longer than a falling time of the program signal.
Public/Granted literature
- US20090073754A1 Multi-level phase change memory device, program method thereof, and method and system including the same Public/Granted day:2009-03-19
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