Invention Grant
- Patent Title: Stress sensing devices and methods
- Patent Title (中): 应力传感装置和方法
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Application No.: US12714605Application Date: 2010-03-01
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Publication No.: US08240218B2Publication Date: 2012-08-14
- Inventor: Udo Ausserlechner , Mario Motz
- Applicant: Udo Ausserlechner , Mario Motz
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Patterson Thuente Christensen Pedersen, P.A.
- Main IPC: G01B7/16
- IPC: G01B7/16

Abstract:
Embodiments relate to stress sensing devices and methods. In an embodiment, a sensor device includes an active layer; and at least three contacts spaced apart from one another in the active layer, the at least three contacts being coupleable in a first configuration for a first operating mode of the sensor device in which a current in the active layer has a first ratio of horizontal to vertical components with respect to a die surface and in a second configuration different from the first for a second operating mode of the sensor device in which a current in the active layer has a second ratio of horizontal to vertical components, wherein a ratio of a resistance between at least two of the contacts in the first operating mode and a resistance between at least two of the contacts in the second operating mode is related to mechanical stress in the sensor device.
Public/Granted literature
- US20110209556A1 STRESS SENSING DEVICES AND METHODS Public/Granted day:2011-09-01
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