发明授权
US08241977B2 Short channel transistor with reduced length variation by using amorphous electrode material during implantation
有权
在植入期间通过使用非晶电极材料减小长度变化的短沟道晶体管
- 专利标题： Short channel transistor with reduced length variation by using amorphous electrode material during implantation
- 专利标题（中）： 在植入期间通过使用非晶电极材料减小长度变化的短沟道晶体管
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申请号： US12692698申请日： 2010-01-25
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公开(公告)号： US08241977B2公开(公告)日： 2012-08-14
- 发明人: Thilo Scheiper , Andy Wei , Sven Beyer
- 申请人： Thilo Scheiper , Andy Wei , Sven Beyer
- 申请人地址： KY Cayman Islands
- 专利权人： GlobalFoundries Inc.
- 当前专利权人： GlobalFoundries Inc.
- 当前专利权人地址： KY Cayman Islands
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102009006801 20090130
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
In sophisticated transistor elements, enhanced profile uniformity along the transistor width direction may be accomplished by using a gate material in an amorphous state, thereby reducing channeling effects and line edge roughness. In sophisticated high-k metal gate approaches, an appropriate sequence may be applied to avoid a change of the amorphous state prior to performing the critical implantation processes for forming drain and source extension regions and halo regions.
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