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US08242354B2 Backside contact solar cell with formed polysilicon doped regions 有权
背面接触太阳能电池,形成多晶硅掺杂区域

Backside contact solar cell with formed polysilicon doped regions
Abstract:
A solar cell includes abutting P-type and N-type doped regions in a contiguous portion of a polysilicon layer. The polysilicon layer may be formed on a thin dielectric layer, which is formed on a backside of a solar cell substrate (e.g., silicon wafer). The polysilicon layer has a relatively large average grain size to reduce or eliminate recombination in a space charge region between the P-type and N-type doped regions, thereby increasing efficiency.
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