A nonvolatile latch circuit includes: a latch circuit; a first magnetoresistance element and a second magnetoresistance element; and a current supply portion. The latch circuit temporarily holds data. Each of the first magnetoresistance element and the second magnetoresistance element includes a first magnetic layer and a second magnetic layer that are stacked with an insulating film sandwiched therebetween. The current supply portion complementarily changes magnetization states of the first magnetoresistance element and the second magnetoresistance element based on a state of the latch circuit. The first magnetic layer of the first magnetoresistance element and the first magnetic layer of the second magnetoresistance element are series-connected to each other in. The latch circuit has a function that brings data corresponding to the magnetization states to data held by the latch circuit.