发明授权
US08245159B2 Gradient based search mechanism for optimizing photolithograph masks 有权
基于梯度的搜索机制,用于优化光刻胶掩模

Gradient based search mechanism for optimizing photolithograph masks
摘要:
A mechanism is provided for optimizing a photolithograph mask. A given target pattern is received. An initial fictitious mask is generated from the given target pattern and an initial value of α2 is selected where the initial value of α2 is used to determine a light intensity and a wafer image. The light intensity for each pixel in the initial fictitious mask and the wafer image for each pixel in the initial fictitious mask are then determined. A determination is then made as to whether a convergence has been achieved by comparing the wafer image generated from the fictitious mask to the given target pattern. Responsive to a convergence of the wafer image generated from the fictitious mask to the given target pattern, a final mask is generated to use to transfer an image to a wafer.
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