发明授权
- 专利标题： Method for manufacturing SOI substrate
- 专利标题（中）： 制造SOI衬底的方法
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申请号： US12505020申请日： 2009-07-17
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公开(公告)号： US08247308B2公开(公告)日： 2012-08-21
- 发明人: Akihiro Ishizuka , Shinya Sasagawa , Motomu Kurata , Atsushi Hikosaka , Taiga Muraoka , Hitoshi Nakayama
- 申请人： Akihiro Ishizuka , Shinya Sasagawa , Motomu Kurata , Atsushi Hikosaka , Taiga Muraoka , Hitoshi Nakayama
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2008-189015 20080722
- 主分类号： H01L21/30
- IPC分类号： H01L21/30
摘要：
It is an object of the preset invention to increase adhesiveness of a semiconductor layer and a base substrate and to reduce defective bonding. An oxide film is formed on a semiconductor substrate and the semiconductor substrate is irradiated with accelerated ions through the oxide film, whereby an embrittled region is formed at a predetermined depth from a surface of the semiconductor substrate. Plasma treatment is performed on the oxide film on the semiconductor substrate and the base substrate by applying a bias voltage, the surface of the semiconductor substrate and a surface of the base substrate are disposed opposite to each other, a surface of the oxide film is bonded to the surface of the base substrate, heat treatment is performed after the surface of the oxide film is bonded to the surface of the base substrate, and separation is caused along the embrittled region, whereby a semiconductor layer is formed over the base substrate with the oxide film interposed therebetween.
公开/授权文献
- US20100047997A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 公开/授权日：2010-02-25
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