Invention Grant
- Patent Title: Method for preparing a germanium layer from a silicon-germanium-on-isolator substrate
- Patent Title (中): 从硅 - 锗隔离器衬底制备锗层的方法
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Application No.: US12525756Application Date: 2008-02-07
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Publication No.: US08247313B2Publication Date: 2012-08-21
- Inventor: Benjamin Vincent , Jean-Francois Damlencourt , Yves Morand
- Applicant: Benjamin Vincent , Jean-Francois Damlencourt , Yves Morand
- Applicant Address: FR Paris FR Crolles
- Assignee: Commissariat a l'Energie Atomique,STMicroelectronics (Crolles 2) SAS
- Current Assignee: Commissariat a l'Energie Atomique,STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Paris FR Crolles
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0753146 20070208
- International Application: PCT/EP2008/051511 WO 20080207
- International Announcement: WO2008/101813 WO 20080828
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/336
Abstract:
A method for making a germanium-on-insulator layer from an SGOI substrate, including: a) depositing on the substrate a layer of a metallic element M capable of selectively forming a silicide, the layer being in contact with a silicon-germanium alloy layer; and b) a reaction between the alloy layer and the layer of a metallic element M, by which a stack of M silicide-germanium-insulator layers is obtained. Such a method may, for example, find application to production of electronic devices such as MOSFET transistors.
Public/Granted literature
- US20100035414A1 METHOD FOR PREPARING A GERMANIUM LAYER FROM A SILICON-GERMANIUM-ON-ISOLATOR SUBSTRATE Public/Granted day:2010-02-11
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