发明授权
- 专利标题： Semiconductor device and method for manufacturing semiconductor device
- 专利标题（中）： 半导体装置及半导体装置的制造方法
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申请号： US12627510申请日： 2009-11-30
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公开(公告)号： US08247841B2公开(公告)日： 2012-08-21
- 发明人: Takayuki Saiki , Shinya Sato , Hiroyuki Takamiya
- 申请人： Takayuki Saiki , Shinya Sato , Hiroyuki Takamiya
- 申请人地址： JP Tokyo
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2008-307493 20081202
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/00
摘要：
A semiconductor device includes: a plurality of semiconductor substrates that are layered; a through electrode penetrating through a predetermined semiconductor substrate of the semiconductor substrates and electrically connected with an external terminal of the semiconductor device; a circuit element provided on the predetermined semiconductor substrate; and an electrostatic discharge protection circuit also provided on the predetermined semiconductor substrate. In the device, wiring resistance between the electrostatic discharge protection circuit and the through electrode is smaller than wiring resistance between the circuit element and the through electrode.