Invention Grant
- Patent Title: Solid-state imaging device and manufacturing method therefor
- Patent Title (中): 固态成像装置及其制造方法
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Application No.: US12612466Application Date: 2009-11-04
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Publication No.: US08247847B2Publication Date: 2012-08-21
- Inventor: Kaori Takimoto , Masayuki Okada , Takeshi Takeda
- Applicant: Kaori Takimoto , Masayuki Okada , Takeshi Takeda
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rockey, Depke & Lyons, LLC
- Agent Robert J. Depke
- Priority: JP2008-312847 20081209
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L29/66
Abstract:
A solid-state imaging device including a first transfer electrode portion and a second transfer electrode portion having a pattern area ratio higher than that of the first transfer electrode portion. The first transfer electrode portion includes a plurality of first transfer electrodes having a single-layer structure of metal material. The second transfer electrode portion includes a plurality of second transfer electrodes having a single-layer structure of polycrystalline silicon or amorphous silicon.
Public/Granted literature
- US20100140667A1 SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2010-06-10
Information query
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