发明授权
- 专利标题： CMOS image sensor
- 专利标题（中）： CMOS图像传感器
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申请号： US12899473申请日： 2010-10-06
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公开(公告)号： US08247854B2公开(公告)日： 2012-08-21
- 发明人: Jin Yeong Kang
- 申请人： Jin Yeong Kang
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2009-0095776 20091008; KR10-2010-0034426 20100414
- 主分类号： H01L31/062
- IPC分类号： H01L31/062
摘要：
Disclosed is a CMOS image sensor and a manufacturing method thereof. According to an aspect of the present invention, each pixel of CMOS image sensor includes a photo detector that includes an electon Collection layer doped with a concentration of 5×1015/cm3 to 2×1016/cm3; and a transfer transistor that is connected to the photo detector and is formed of a vertical type trench gate of which the equivalent oxide thickness is 120 Å or more.
公开/授权文献
- US20110084322A1 CMOS IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 公开/授权日：2011-04-14
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