CMOS image sensor

Invention Grant

Title translation: CMOS图像传感器

Please log in to see more content

Patent Title: CMOS image sensor
Patent Title (中): CMOS图像传感器
Application No.: US12899473

Application Date: 2010-10-06
Publication No.: US08247854B2

Publication Date: 2012-08-21
Inventor: Jin Yeong Kang
Applicant: Jin Yeong Kang
Applicant Address: KR Daejeon
Assignee: Electronics and Telecommunications Research Institute
Current Assignee: Electronics and Telecommunications Research Institute
Current Assignee Address: KR Daejeon
Priority: KR10-2009-0095776 20091008; KR10-2010-0034426 20100414
Main IPC: H01L31/062
IPC: H01L31/062

Abstract:

Disclosed is a CMOS image sensor and a manufacturing method thereof. According to an aspect of the present invention, each pixel of CMOS image sensor includes a photo detector that includes an electon Collection layer doped with a concentration of 5×1015/cm3 to 2×1016/cm3; and a transfer transistor that is connected to the photo detector and is formed of a vertical type trench gate of which the equivalent oxide thickness is 120 Å or more.

Abstract(Chinese):

公开了CMOS图像传感器及其制造方法。根据本发明的一个方面，CMOS图像传感器的每个像素包括光电检测器，其包括以5×10 15 / cm 3至2×10 16 / cm 3的浓度掺杂的电子收集层; 以及连接到光检测器并由等效氧化物厚度为120以上的垂直型沟槽栅极形成的转移晶体管。

Public/Granted literature

US20110084322A1 CMOS IMAGE SENSOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-04-14

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/04	.用作光伏〔PV〕转换器件（制造中其测试入H01L21/66；制造之后其测试入H02S50/10）
H01L31/06	..以至少有一个电位跃变势垒或表面势垒为特征的
H01L31/062	...只是金属—绝缘体—半导体型势垒的