发明授权
- 专利标题： Nonvolatile semiconductor memory device and method for manufacturing same
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US12646684申请日： 2009-12-23
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公开(公告)号： US08247860B2公开(公告)日： 2012-08-21
- 发明人: Masao Iwase , Tadashi Iguchi
- 申请人： Masao Iwase , Tadashi Iguchi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2009-156731 20090701
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A nonvolatile semiconductor memory device includes: a substrate; a stacked body with a plurality of dielectric films and electrode films alternately stacked therein, the stacked body being provided on the substrate and having a step in its end portion for each of the electrode films; an interlayer dielectric film burying the end portion of the stacked body; a plurality of semiconductor pillars extending in the stacking direction of the stacked body and penetrating through a center portion of the stacked body; a charge storage layer provided between one of the electrode films and one of the semiconductor pillars; and a plug buried in the interlayer dielectric film and connected to a portion of each of the electrode films constituting the step, a portion of each of the dielectric films in the center portion having a larger thickness than a portion of each of the dielectric films in the end portion.
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