发明授权
- 专利标题: Interconnection between sublithographic-pitched structures and lithographic-pitched structures
- 专利标题(中): 亚光刻凹凸结构与平版印刷结构之间的互连
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申请号: US12540759申请日: 2009-08-13
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公开(公告)号: US08247904B2公开(公告)日: 2012-08-21
- 发明人: Sarunya Bangsaruntip , Daniel C. Edelstein , William D. Hinsberg , Ho-Cheol Kim , Steven Koester , Paul M. Soloman
- 申请人: Sarunya Bangsaruntip , Daniel C. Edelstein , William D. Hinsberg , Ho-Cheol Kim , Steven Koester , Paul M. Soloman
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Louis J. Percello, Esq.
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
An interconnection between a sublithographic-pitched structure and a lithographic pitched structure is formed. A plurality of conductive lines having a sublithographic pitch may be lithographically patterned and cut along a line at an angle less than 45 degrees from the lengthwise direction of the plurality of conductive lines. Alternately, a copolymer mixed with homopolymer may be placed into a recessed area and self-aligned to form a plurality of conductive lines having a sublithographic pitch in the constant width region and a lithographic dimension between adjacent lines at a trapezoidal region. Yet alternately, a first plurality of conductive lines with the sublithographic pitch and a second plurality of conductive lines with the lithographic pitch may be formed at the same level or at different.