Invention Grant
- Patent Title: Triplet transconductor
- Patent Title (中): 三重跨导体
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Application No.: US13074051Application Date: 2011-03-29
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Publication No.: US08248166B2Publication Date: 2012-08-21
- Inventor: Kevin W. Kobayashi
- Applicant: Kevin W. Kobayashi
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H03F3/04
- IPC: H03F3/04
Abstract:
To reduce a knee voltage of a Darlington amplifier, a negative voltage is applied by a depletion mode FET between the emitter of one amplifying transistor and the base of another amplifying transistor to provide a reduced potential, which reduces the knee voltage of the Darlington amplifier. Reducing the knee voltage of the Darlington amplifier decreases the size of a saturation region thereby increasing the linearity of the Darlington amplifier.
Public/Granted literature
- US20110316635A1 TRIPLET TRANSCONDUCTOR Public/Granted day:2011-12-29
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