发明授权
US08248837B2 Nonvolatile semiconductor memory device and reading method of nonvolatile semiconductor memory device
失效
非易失性半导体存储器件和非易失性半导体存储器件的读取方法
- 专利标题： Nonvolatile semiconductor memory device and reading method of nonvolatile semiconductor memory device
- 专利标题（中）： 非易失性半导体存储器件和非易失性半导体存储器件的读取方法
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申请号： US12553172申请日： 2009-09-03
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公开(公告)号： US08248837B2公开(公告)日： 2012-08-21
- 发明人: Kentaro Kinoshita
- 申请人： Kentaro Kinoshita
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A nonvolatile semiconductor memory device includes a memory cell including a resistance memory element which memorizes a high resistance state or a low resistance state, switches the high resistance state and the low resistance state by voltage application, one end of the resistance memory element being coupled to a bit line, the other end of the resistance memory element being coupled to a source line via the first transistor; and a resistor whose resistance value is higher than a resistance value of the resistance memory element in the low resistance state and lower than a resistance value of the resistance memory element in the high resistance state, one end of the resistor being coupled to said one end of the resistance memory element and the bit line, the other end of the resistor being coupled to the source line via the second transistor.
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