发明授权
- 专利标题: Memory error detection and/or correction
- 专利标题(中): 存储器错误检测和/或校正
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申请号: US12559953申请日: 2009-09-15
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公开(公告)号: US08250435B2公开(公告)日: 2012-08-21
- 发明人: Robert G. Blankenship , Dennis W. Brzezinski , Edwin F. Mendez Valverde
- 申请人: Robert G. Blankenship , Dennis W. Brzezinski , Edwin F. Mendez Valverde
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理商 Christopher K. Gagne
- 主分类号: H03M13/00
- IPC分类号: H03M13/00
摘要:
An embodiment may include circuitry that may detect and/or correct at least one error in a data codeword that may include a data word, cyclical redundancy check (CRC) word, and parity word. The circuitry may select whether a portion of the CRC word indicates whether only a single processor has accessed the data word. The data word, CRC word, and the parity word may be accessible in respective distinct memory device sets that each may include one or more respective memory devices. If the circuitry detects, based at least in part upon the data codeword and CRC word, a CRC error, and the at least one error includes fewer than a first predetermined number of errors, the circuitry may determine in which of the one or more respective memory devices in the memory device sets the at least one error resides and may correct the at least one error.
公开/授权文献
- US20110066919A1 MEMORY ERROR DETECTION AND/OR CORRECTION 公开/授权日:2011-03-17