Invention Grant
- Patent Title: Sub-micron decal transfer lithography
- Patent Title (中): 亚微米贴花转印光刻
-
Application No.: US11911787Application Date: 2006-05-05
-
Publication No.: US08252191B2Publication Date: 2012-08-28
- Inventor: Ahn Heejoon , Ralph Nuzzo , Anne Shim
- Applicant: Ahn Heejoon , Ralph Nuzzo , Anne Shim
- Applicant Address: US MI Midland
- Assignee: Dow Corning Corporation
- Current Assignee: Dow Corning Corporation
- Current Assignee Address: US MI Midland
- Agency: Brinks Hofer Gilson & Lione
- International Application: PCT/US2006/017498 WO 20060505
- International Announcement: WO2006/121906 WO 20061116
- Main IPC: B44C1/22
- IPC: B44C1/22
Abstract:
The present invention provides a method of sub-micron decal transfer lithography. The method includes forming a first pattern in a surface of a first silicon-containing elastomer, bonding at least a portion of the first pattern to a substrate, and etching a portion of at least one of the first silicon-containing elastomer and the substrate.
Public/Granted literature
- US20080190888A1 Sub-Micron Decal Transfer Lithography Statement Regarding Federally Sponsored Research or Development Public/Granted day:2008-08-14
Information query
