发明授权
US08254071B2 Method and apparatus of providing 2-stage ESD protection for high-speed interfaces
有权
为高速接口提供2级ESD保护的方法和设备
- 专利标题: Method and apparatus of providing 2-stage ESD protection for high-speed interfaces
- 专利标题(中): 为高速接口提供2级ESD保护的方法和设备
-
申请号: US12180440申请日: 2008-07-25
-
公开(公告)号: US08254071B2公开(公告)日: 2012-08-28
- 发明人: Jeff Dunnihoo , Richard Kimoto
- 申请人: Jeff Dunnihoo , Richard Kimoto
- 申请人地址: US AZ Phoenix
- 专利权人: Semiconductor Components Industries, LLC
- 当前专利权人: Semiconductor Components Industries, LLC
- 当前专利权人地址: US AZ Phoenix
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 主分类号: H02H9/00
- IPC分类号: H02H9/00 ; H02H7/12 ; H02H1/00 ; H02H1/04 ; H02H3/22 ; H02H9/06
摘要:
The present invention relates to a method and apparatus of providing 2-stage ESD protection for high-speed interfaces. An aspect of the present invention is to provide an integrated multi-stage ESD/EOS protection solution for such high-speed applications. In one embodiment, the ESD protection device has multiple ESD stages integrated into a single integrated circuit package and is mounted to a printed circuit board in series with a device under protection. In another embodiment the multiple ESD stages integrated into a single integrated circuit package of the ESD protection device are coupled with a series element that isolates a 2nd stage from a 1st stage during an ESD event, thus ensuring that the 2nd stage turns on before the 1st stage, as well as provides for less current in the 2nd stage.
公开/授权文献
信息查询