Invention Grant
- Patent Title: Semiconductor device using magnetic domain wall movement
- Patent Title (中): 半导体器件采用磁畴壁运动
-
Application No.: US12289484Application Date: 2008-10-29
-
Publication No.: US08254164B2Publication Date: 2012-08-28
- Inventor: Sung-chul Lee , Kwang-seok Kim , Ung-hwan Pi , Ji-young Bae , Sun-ae Seo
- Applicant: Sung-chul Lee , Kwang-seok Kim , Ung-hwan Pi , Ji-young Bae , Sun-ae Seo
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0109157 20071029
- Main IPC: G11C11/14
- IPC: G11C11/14 ; H01L43/02

Abstract:
Provided may be a semiconductor device using magnetic domain wall movement. The semiconductor device may include a magnetic track having a plurality of magnetic domains and a thermal conductive insulating layer configured to contact the magnetic track. The thermal conductive insulating layer may prevent or reduce the magnetic track from being heated due to a current supplied to the magnetic track.
Public/Granted literature
- US20090109740A1 Semiconductor device using magnetic domain wall movement Public/Granted day:2009-04-30
Information query