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US08254164B2 Semiconductor device using magnetic domain wall movement 有权
半导体器件采用磁畴壁运动

Semiconductor device using magnetic domain wall movement
Abstract:
Provided may be a semiconductor device using magnetic domain wall movement. The semiconductor device may include a magnetic track having a plurality of magnetic domains and a thermal conductive insulating layer configured to contact the magnetic track. The thermal conductive insulating layer may prevent or reduce the magnetic track from being heated due to a current supplied to the magnetic track.
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