发明授权
- 专利标题： Double rie damascene process for nose length control
- 专利标题（中）： 用于鼻长度控制的双重镶嵌工艺
-
申请号： US12717090申请日： 2010-03-03
-
公开(公告)号： US08257597B1公开(公告)日： 2012-09-04
- 发明人: Lijie Guan , Changqing Shi , Ming Jiang , Yun-Fei Li
- 申请人： Lijie Guan , Changqing Shi , Ming Jiang , Yun-Fei Li
- 申请人地址： US CA Fremont
- 专利权人： Western Digital (Fremont), LLC
- 当前专利权人： Western Digital (Fremont), LLC
- 当前专利权人地址： US CA Fremont
- 主分类号： B44C1/22
- IPC分类号： B44C1/22
摘要：
Methods of forming a write pole are disclosed. A first photomask having a first opening over one of a yoke region and a pole tip region of the write pole is formed over an insulation layer having an insulator material. A first etch process is performed on the insulation layer via the first opening, the first etch process removing the insulator material from a corresponding one of the yoke region and the pole tip region. A second photomask having a second opening over the other one of the yoke region and the pole tip region is formed over the insulation layer. A second etch process is performed on the insulation layer via the second opening, the second etch process removing the insulator material from a corresponding one of the yoke region and the pole tip region.
信息查询
