发明授权
US08258482B2 Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof 有权
使用异质结的半导体伽马辐射检测器中的能量分辨率及其使用方法及其制备

Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof
摘要:
In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.
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