发明授权
- 专利标题： Integrated circuit including a bipolar transistor and methods of making the same
- 专利标题（中）： 包括双极晶体管的集成电路及其制造方法
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申请号： US13047468申请日： 2011-03-14
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公开(公告)号： US08258545B1公开(公告)日： 2012-09-04
- 发明人: Wei-Tung Huang , Chun-Tsung Kuo , Shih-Chang Liu , Yeur-Luen Tu
- 申请人： Wei-Tung Huang , Chun-Tsung Kuo , Shih-Chang Liu , Yeur-Luen Tu
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman Ham & Berner, LLP
- 主分类号： H01L29/73
- IPC分类号： H01L29/73
摘要：
An integrated circuit includes a bipolar transistor disposed over a substrate. The bipolar transistor includes a base electrode disposed around at least one germanium-containing layer. An emitter electrode is disposed over the at least one germanium-containing layer. At least one isolation structure is disposed between the emitter electrode and the at least one germanium-containing layer. A top surface of the at least one isolation structure is disposed between and electrically isolating a top surface of the emitter electrode from a top surface of the at least one germanium-containing layer.
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