发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12929697申请日： 2011-02-09
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公开(公告)号： US08258589B2公开(公告)日： 2012-09-04
- 发明人: Hiroshi Sunamura
- 申请人： Hiroshi Sunamura
- 申请人地址： JP Kawasaki-Shi, Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-Shi, Kanagawa
- 代理机构： McGinn IP Law Group, PLLC
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device includes a gate stack structure. The gate stack structure includes an interfacial layer formed on a semiconductor substrate, a high-k dielectric formed on the interfacial layer, a silicide gate including a diffusive material and an impurity metal, and formed over the high-k dielectric, and a barrier metal with a barrier effect to the diffusive material, and formed between the high-k dielectric and the metal gate. The impurity metal has a barrier effect to the diffusive material so that the diffusive material in the silicide gate can be prevented from being introduced into the high-k dielectric.
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