发明授权
- 专利标题： Solid-state high-luminance far ultraviolet light emitting element including highly pure hexagonal boron nitride single crystal
- 专利标题（中）： 固态高亮度远紫外发光元件包括高纯度六方氮化硼单晶
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申请号： US12588462申请日： 2009-10-16
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公开(公告)号： US08258603B2公开(公告)日： 2012-09-04
- 发明人: Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
- 申请人： Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
- 申请人地址： JP Tsukuba-Shi
- 专利权人： National Institute for Materials Science
- 当前专利权人： National Institute for Materials Science
- 当前专利权人地址： JP Tsukuba-Shi
- 代理商 Manabu Kanesaka
- 优先权： JP2003-388467 20031118; JP2004-035501 20040212; JP2004-260480 20040908
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
A solid-state far ultraviolet light emitting element is formed by a hexagonal boron nitride single crystal, excited by electron beam irradiation to emit far ultraviolet light having a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.
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