发明授权
US08259464B2 Wafer level package (WLP) device having bump assemblies including a barrier metal
有权
具有包括阻挡金属的凸块组件的晶片级封装（WLP）器件
- 专利标题： Wafer level package (WLP) device having bump assemblies including a barrier metal
- 专利标题（中）： 具有包括阻挡金属的凸块组件的晶片级封装（WLP）器件
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申请号： US12822326申请日： 2010-06-24
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公开(公告)号： US08259464B2公开(公告)日： 2012-09-04
- 发明人: Tiao Zhou , Arkadii V. Samoilov
- 申请人： Tiao Zhou , Arkadii V. Samoilov
- 申请人地址： US CA San Jose
- 专利权人： Maxim Integrated Products, Inc.
- 当前专利权人： Maxim Integrated Products, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Advent IP, P.C., L.L.O.
- 主分类号： H05K7/12
- IPC分类号： H05K7/12 ; H01L21/44
摘要：
WLP semiconductor devices include bump assemblies that have a barrier layer for inhibiting electromigration within the bump assemblies. In an implementation, the bump assemblies include copper posts formed on the integrated circuit chips of the WLP devices. Barrier layers formed of a metal such as nickel (Ni) are provided on the outer surface of the copper posts to inhibit electromigration in the bump assembly. Oxidation prevention caps formed of a metal such as tin (Sn) are provided over the barrier layer. Solder bumps are formed over the oxidation prevention caps. The oxidation prevention caps inhibit oxidation of the barrier layer during fabrication of the bump assemblies.
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