Invention Grant
- Patent Title: Self-timed write boost for SRAM cell with self mode control
- Patent Title (中): 具有自我模式控制的SRAM单元的自定时写入升压
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Application No.: US12571170Application Date: 2009-09-30
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Publication No.: US08259486B2Publication Date: 2012-09-04
- Inventor: Ashish Kumar , Naveen Batra
- Applicant: Ashish Kumar , Naveen Batra
- Applicant Address: NL Amsterdam
- Assignee: STMicroelectronics International N.V.
- Current Assignee: STMicroelectronics International N.V.
- Current Assignee Address: NL Amsterdam
- Agency: Hogan Lovells US LLP
- Priority: IN1616/DEL/2009 20090803
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A write boost circuit provides an automatic mode control for boost with different modalities with respect to the external supply voltage and also with respect to the extent of boost required at different process corners. The write boost circuit also takes care of the minimum boost provided to process corners with good writability where less boost is required. The boost is realized in terms of ground raising in the particular context and in general applicable to all other methods.
Public/Granted literature
- US20110026309A1 SELF-TIMED WRITE BOOST FOR SRAM CELL WITH SELF MODE CONTROL Public/Granted day:2011-02-03
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