Invention Grant
US08259486B2 Self-timed write boost for SRAM cell with self mode control 有权
具有自我模式控制的SRAM单元的自定时写入升压

Self-timed write boost for SRAM cell with self mode control
Abstract:
A write boost circuit provides an automatic mode control for boost with different modalities with respect to the external supply voltage and also with respect to the extent of boost required at different process corners. The write boost circuit also takes care of the minimum boost provided to process corners with good writability where less boost is required. The boost is realized in terms of ground raising in the particular context and in general applicable to all other methods.
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