发明授权
US08259769B1 Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates
有权
用于高增益激光二极管的集成内部反射器，在非极性/半极性GaN衬底上具有高质量的切割面
- 专利标题： Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates
- 专利标题（中）： 用于高增益激光二极管的集成内部反射器，在非极性/半极性GaN衬底上具有高质量的切割面
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申请号： US12502058申请日： 2009-07-13
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公开(公告)号： US08259769B1公开(公告)日： 2012-09-04
- 发明人: James W. Raring , Daniel F. Feezell
- 申请人： James W. Raring , Daniel F. Feezell
- 申请人地址： US CA Fremont
- 专利权人： Soraa, Inc.
- 当前专利权人： Soraa, Inc.
- 当前专利权人地址： US CA Fremont
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 主分类号： H01S5/00
- IPC分类号： H01S5/00
摘要：
A laser diode device operable at a one or more wavelength ranges. The device has a first waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the first waveguide has a first gain characteristic and a first direction. In a specific embodiment, the first waveguide has a first end and a second end and a first length defined between the first end and the second end. The device has a second waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the second waveguide has a second gain characteristic and a second direction. In a specific embodiment, the second waveguide has a first end, a second end, and a second length defined between the first end and the second end. In a specific embodiment, the second waveguide has the first end being coupled to the first end of the first waveguide. The second length is in a different direction from the second length. In a specific embodiment, the device has a cleaved region provided on the second end of the second waveguide, the cleaved region being perpendicular to the second direction of the second waveguide.
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