发明授权
- 专利标题: In-situ wafer processing system and method
- 专利标题(中): 原位晶圆处理系统及方法
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申请号: US12360858申请日: 2009-01-28
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公开(公告)号: US08261730B2公开(公告)日: 2012-09-11
- 发明人: Abhaya Kumar Bakshi , Bhaskar Chandra Panigrahi
- 申请人: Abhaya Kumar Bakshi , Bhaskar Chandra Panigrahi
- 申请人地址: US MA Cambridge
- 专利权人: Cambridge Energy Resources Inc
- 当前专利权人: Cambridge Energy Resources Inc
- 当前专利权人地址: US MA Cambridge
- 代理机构: Global IP Services, PLLC
- 代理商 Prakash Nama
- 主分类号: B28D1/06
- IPC分类号: B28D1/06
摘要:
An integrated wafer processing system and a method thereof is disclosed. In one embodiment, a wafer stack of sliced wafers includes a base, and a plurality of sliced wafers extending outwardly from the base, where the plurality of sliced wafers are obtained by slicing a portion of a work piece, where the base is an uncut portion which is the remaining portion of the work piece or a plate attached by welding to the plurality of sliced wafers and where the work piece is mono-crystalline or multi-crystalline silicon. Further, the wafer stack of sliced wafers are treated in-situ in cleaning and wet chemical tanks for processes such as damage etching, texturization and oxide etching and also treated in-situ in high temperature furnaces for processes such as diffusion and anti-reflection coating.
公开/授权文献
- US20100126489A1 IN-SITU WAFER PROCESSING SYSTEM AND METHOD 公开/授权日:2010-05-27
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