Invention Grant
- Patent Title: Pixel structure and method for forming the same
- Patent Title (中): 像素结构及其形成方法
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Application No.: US12652169Application Date: 2010-01-05
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Publication No.: US08263445B2Publication Date: 2012-09-11
- Inventor: Yu-Hsin Ting
- Applicant: Yu-Hsin Ting
- Applicant Address: TW Hsin-Chu
- Assignee: AU Optronics Corp.
- Current Assignee: AU Optronics Corp.
- Current Assignee Address: TW Hsin-Chu
- Agency: Bacon&Thomas, PLLC
- Priority: TW96111888 20070403
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A pixel structure comprising at least one transistor, a first storage capacitor, a first conductive layer, an interlayer dielectric layer, a second conductive layer, a passivation layer, and a third conductive layer is provided. The first storage capacitor is electrically connected to the transistor. The interlayer dielectric layer having at least one first opening covers the first conductive layer. The second conductive layer is formed on a part of the interlayer dielectric layer and is electrically connected to the first conductive layer through the first opening. The passivation layer having at least one second opening covers the transistor and the second conductive layer. The third conductive layer is formed on a part of the passivation layer and is electrically connected to the transistor through the second opening. The first storage capacitor is formed by the third conductive layer, the passivation layer, and the second conductive layer.
Public/Granted literature
- US20100112773A1 PIXEL STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2010-05-06
Information query
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