发明授权
US08263464B2 Systems and methods for memory structure comprising a PPROM and an embedded flash memory
有权
用于存储器结构的系统和方法，包括PPROM和嵌入式闪存
- 专利标题： Systems and methods for memory structure comprising a PPROM and an embedded flash memory
- 专利标题（中）： 用于存储器结构的系统和方法，包括PPROM和嵌入式闪存
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申请号： US12791508申请日： 2010-06-01
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公开(公告)号： US08263464B2公开(公告)日： 2012-09-11
- 发明人: Chao I Wu
- 申请人： Chao I Wu
- 申请人地址： TW
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW
- 代理机构： Baker & McKenzie LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A memory structure that combines embedded flash memory and PPROM. The PPROM can be used as a memory structure. The flash memory can be used, e.g., as air replacement cells or back up memory, or additional memory cells. The PPROM cells are stacked on top of the flash memory cells and the PPROM density can be increased by implementing three-dimensional PPROM structures.
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