Invention Grant
- Patent Title: Silicon dioxide film fabricating process
- Patent Title (中): 二氧化硅膜制造工艺
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Application No.: US12968606Application Date: 2010-12-15
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Publication No.: US08263501B2Publication Date: 2012-09-11
- Inventor: Chien-Liang Lin , Yu-Ren Wang , Ying-Wei Yen
- Applicant: Chien-Liang Lin , Yu-Ren Wang , Ying-Wei Yen
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agent Ding Yu Tan
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A silicon dioxide film fabricating process includes the following steps. Firstly, a substrate is provided. A rapid thermal oxidation-in situ steam generation process is performed to form a silicon dioxide film on the substrate. An annealing process is performed to anneal the substrate in a first gas mixture at a temperature in the range of 1000° C. to 1100° C.
Public/Granted literature
- US20120156891A1 SILICON DIOXIDE FILM FABRICATING PROCESS Public/Granted day:2012-06-21
Information query
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